Part BF1201
Description N-channel dual-gate PoLo MOS-FETs
Category MOSFET
Manufacturer NXP Semiconductors
Size 113.99 KB
NXP Semiconductors

BF1201 Overview

Description

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges.

Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier
  • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS