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FP1510SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

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Description

Preliminary Data Sheet * .
AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobilit.

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Features

* 28 dBm Output Power at 1-dB Compression at 1.8 GHz
* 19 dB Power Gain at 1.8 GHz
* 1.0 dB Noise Figure
* 45 dBm Output IP3 at 1.8 GHz
* 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

Applications

* The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimize

FP1510SOT89 Distributors

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FP1510SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors FP1510SOT89-like datasheet
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