Datasheet4U Logo Datasheet4U.com

FP1510SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Description

AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography.

Features

  • S.
  • 28 dBm Output Power at 1-dB Compression at 1.8 GHz.
  • 19 dB Power Gain at 1.8 GHz.
  • 1.0 dB Noise Figure.
  • 45 dBm Output IP3 at 1.8 GHz.
  • 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH.

📥 Download Datasheet

Datasheet preview – FP1510SOT89

Datasheet Details

Part number FP1510SOT89
Manufacturer Filtronic Compound Semiconductors
File Size 139.21 KB
Description LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Datasheet download datasheet FP1510SOT89 Datasheet
Additional preview pages of the FP1510SOT89 datasheet.

📁 Similar Datasheet

Other Datasheets by Filtronic Compound Semiconductors
  • FP100 - HIGH PERFORMANCE PHEMT

Full PDF Text Transcription

Click to expand full text
Preliminary Data Sheet • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 19 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 45 dBm Output IP3 at 1.8 GHz ♦ 50% Power-Added Efficiency FP1510SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • DESCRIPTION AND APPLICATIONS The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications.
Published: |