LP3000P100 PACKAGED 2W POWER PHEMT

Filtronic Compound Semiconductors

Description

PACKAGED 2W POWER PHEMT * .
AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

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LP3000P100 Datasheet Preview — Preview of LP3000P100 PDF

Datasheet Specifications

Part number: LP3000P100
Manufacturer: Filtronic Compound Semiconductors
File Size: 47.90 KB
Datasheet: LP3000P100_FiltronicCompoundSemiconductors.pdf
Description: PACKAGED 2W POWER PHEMT

Features

* 33 dBm Output Power at 1-dB Compression at 15 GHz
* 8 dB Power Gain at 15 GHz
* 60% Power-Added Efficiency LP3000P100

Applications

* The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 3000 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimiz

LP3000P100 Distributors

📁 Related Datasheet

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LP3000P100 PACKAGED POWER PHEMT Filtronic Compound Semiconductors

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