LP3000SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Filtronic Compound Semiconductors

Description

LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * .
AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobilit.

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Datasheet Specifications

Part number: LP3000SOT89
Manufacturer: Filtronic Compound Semiconductors
File Size: 44.16 KB
Datasheet: LP3000SOT89_FiltronicCompoundSemiconductors.pdf
Description: LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Features

* 29 dBm Output Power at 1-dB Compression at 1.8 GHz
* 15 dB Power Gain at 1.8 GHz
* 1.3 dB Noise Figure
* 46 dBm Output IP3 at 1.8 GHz
* 55% Power-Added Efficiency

Applications

* The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimize

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LP3000SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

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