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LP3000SOT89

LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

LP3000SOT89 Features

* 29 dBm Output Power at 1-dB Compression at 1.8 GHz

* 15 dB Power Gain at 1.8 GHz

* 1.3 dB Noise Figure

* 46 dBm Output IP3 at 1.8 GHz

* 55% Power-Added Efficiency

* DESCRIPTION AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenid

LP3000SOT89 General Description

AND APPLICATIONS The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate s.

LP3000SOT89 Datasheet (44.16 KB)

Preview of LP3000SOT89 PDF

Datasheet Details

Part number:

LP3000SOT89

Manufacturer:

Filtronic Compound Semiconductors

File Size:

44.16 KB

Description:

Low noise/ high linearity packaged phemt.

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TAGS

LP3000SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

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