LP3000 - 2W Power PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LP3000
Manufacturer	Filtronic Compound Semiconductors
File Size	44.97 KB
Description	2W Power PHEMT
Datasheet	LP3000 Datasheet
Additional preview pages of the LP3000 datasheet.

Product details

Description

AND APPLICATIONS DIE SIZE: 28.3X16.5 mils (720x420 µm) DIE THICKNESS: 2.6 mils (65 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 3000 µ m Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The epitaxial structure and processing have been optimi

Features

S.
33.5 dBm Output Power at 1-dB Compression at 18 GHz.
7 dB Power Gain at 18 GHz.
30.5 dBm Output Power at 1-dB Compression at 3.3V.
45% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X) LP3000.

📁 Similar Datasheet

LP30-1600 - POWER TRANSFORMER (Superworld Electronics)
LP30-1600F - POWER TRANSFORMER (Superworld Electronics)
LP30-200 - POWER TRANSFORMER (Superworld Electronics)
LP30-200F - POWER TRANSFORMER (Superworld Electronics)
LP30-400 - POWER TRANSFORMER (Superworld Electronics)
LP30-400F - POWER TRANSFORMER (Superworld Electronics)
LP30-800 - POWER TRANSFORMER (Superworld Electronics)
LP30-800F - POWER TRANSFORMER (Superworld Electronics)

Other Datasheets by Filtronic Compound Semiconductors

LP3000P100 - PACKAGED 2W POWER PHEMT
LP3000SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Published: Mar 22, 2005 |