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LP3000 - 2W Power PHEMT

LP3000 Description

2 W POWER PHEMT * .
AND APPLICATIONS DIE SIZE: 28.

LP3000 Features

* 33.5 dBm Output Power at 1-dB Compression at 18 GHz
* 7 dB Power Gain at 18 GHz
* 30.5 dBm Output Power at 1-dB Compression at 3.3V
* 45% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) GATE BOND PAD (4X) LP3000

LP3000 Applications

* DIE SIZE: 28.3X16.5 mils (720x420 µm) DIE THICKNESS: 2.6 mils (65 µm) BONDING PADS: 1.9X2.4 mils (50x60 µm) The LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m

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