Datasheet Specifications
- Part number
- EC2612-99F
- Manufacturer
- United Monolithic Semiconductors
- File Size
- 817.61 KB
- Datasheet
- EC2612-99F-UnitedMonolithicSemiconductors.pdf
- Description
- 40GHz Super Low Noise pHEMT
Description
EC2612-99F 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor .
Features
* low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required. D: Drain G: Gate S: Source Main FeatEC2612-99F Distributors
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