EC2612-99F Datasheet, Phemt, United Monolithic Semiconductors

EC2612-99F Features

• Phemt low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with

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Part number:

EC2612-99F

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United Monolithic Semiconductors

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📄 Datasheet

Description:

40ghz super low noise phemt. The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology. Gate width is 120

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EC2612-99F

United Monolithic Semiconductors

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