Datasheet4U Logo Datasheet4U.com

FP750SOT343

PACKAGED LOW NOISE/ MEDIUM POWER PHEMT

FP750SOT343 Features

* 0.5 dB Noise Figure at 2 GHz

* 21 dBm P-1dB 2 GHz

* 17 dB Power Gain at 2 GHz

* 33 dBm IP3 at 2 GHz

* 45% Power-Added-Efficiency

* DESCRIPTION AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility

FP750SOT343 General Description

AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-b.

FP750SOT343 Datasheet (55.20 KB)

Preview of FP750SOT343 PDF

Datasheet Details

Part number:

FP750SOT343

Manufacturer:

Filtronic Compound Semiconductors

File Size:

55.20 KB

Description:

Packaged low noise/ medium power phemt.

📁 Related Datasheet

FP75R06KE3 IGBT (Infineon)

FP75R07N2E4 IGBT (Infineon)

FP75R12KE3 IGBT (eupec GmbH)

FP75R12KE3 IGBT (Infineon)

FP75R12KT3 IGBT-inverter (eupec GmbH)

FP75R12KT3 IGBT (Infineon)

FP75R12KT4 IGBT (Infineon)

FP75R12KT4P IGBT (Infineon)

FP75R12KT4P_B11 IGBT (Infineon)

FP75R12KT4_B11 IGBT-Module (Infineon)

TAGS

FP750SOT343 PACKAGED LOW NOISE MEDIUM POWER PHEMT Filtronic Compound Semiconductors

Image Gallery

FP750SOT343 Datasheet Preview Page 2 FP750SOT343 Datasheet Preview Page 3

FP750SOT343 Distributor