LPS200 - HIGH PERFORMANCE LOW NOISE PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	LPS200
Manufacturer	Filtronic Compound Semiconductors
File Size	29.79 KB
Description	HIGH PERFORMANCE LOW NOISE PHEMT
Datasheet	LPS200 Datasheet
Additional preview pages of the LPS200 datasheet.

Product details

Description

AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

S.
1.0 dB Noise Figure at 18 GHz.
10 dB Associated Gain at 18 GHz.
Low DC Power Consumption LPS200 GATE BOND PAD (2X) SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE.

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Other Datasheets by Filtronic Compound Semiconductors

LPS200P70 - PACKAGED LOW NOISE PHEMT

Published: Mar 22, 2005 |