Part number:
LPS200
Manufacturer:
Filtronic Compound Semiconductors
File Size:
29.79 KB
Description:
High performance low noise phemt.
LPS200_FiltronicCompoundSemiconductors.pdf
Datasheet Details
AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic ga
LPS200 Features
* 1.0 dB Noise Figure at 18 GHz
* 10 dB Associated Gain at 18 GHz
* Low DC Power Consumption LPS200 GATE BOND PAD (2X) SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm)
LPS200_FiltronicCompoundSemiconductors.pdf
Datasheet Details
LPS200
Filtronic Compound Semiconductors
29.79 KB
High performance low noise phemt.
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