LPS200 Datasheet - Filtronic Compound Semiconductors

LPS200 HIGH PERFORMANCE LOW NOISE PHEMT

AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic ga.

LPS200 Features

* 1.0 dB Noise Figure at 18 GHz

* 10 dB Associated Gain at 18 GHz

* Low DC Power Consumption LPS200 GATE BOND PAD (2X) SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) DIE SIZE: 12.6X10.2mils (320x260 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.3X2.6 mils (85x65 µm)

LPS200 Datasheet (29.79 KB)