LPS200P70

PACKAGED LOW NOISE PHEMT

Filtronic Compound Semiconductors

LPS200P70 Features

* 0.7 dB Noise Figure at 12 GHz

* 12 dB Associated Gain at 12 GHz

* 0.6 dB Noise Figure at 2 GHz

* 14 dB Associated Gain at 2 GHz

* Low DC Power Consumption LPS200P70

* DESCRIPTION AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arseni

LPS200P70 General Description

AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure.

LPS200P70 Datasheet (59.57 KB)

LPS200P70 Datasheet Preview — Preview of LPS200P70 PDF

Datasheet Details

Part number:

LPS200P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

59.57 KB

Description:

Packaged low noise phemt.

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LPS200P70 PACKAGED LOW NOISE PHEMT Filtronic Compound Semiconductors

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LPS200P70 Features

LPS200P70 General Description

Datasheet Details

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Description:

LPS200P70 Distributor