CMT2N7002 Datasheet | Formosa MS

.. Formosa MS Features SMALL SIGNAL MOSFET GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 115m A DC and can deliver pulsed currents up to 800m A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PIN CONFIGURATION SOT-23 SYMBOL Top View DRAIN SOURCE GATE N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7002 CMT2N7002G- - Note: G : Suffix for Pb Free Product Package SOT-23...