Description
Latest Trench Power AlphaMOS ( α MOS LV) technology
Very Low RDS(on) at 4.5V GS
Low Gate Charge
High Current Capability
RoHS and Halogen-Free Compliant
Features
- VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 20A < 5.8mΩ < 9.8mΩ
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike Power Dissipation B 100ns TA=25°C TA=100°C TA=25°C TA=100°C VGS ID IDM IAS EAS VSPIKE PD TJ, TSTG
Maximum 30 ±20 20 12 144 25 31 36 3.1 1.2 -55 to 150
Units V V A A mJ V W °C
J.
AO4576_Freescale.pdf
