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AOTF15S65 - Power Transistor

This page provides the datasheet information for the AOTF15S65, a member of the AOT15S65 Power Transistor family.

Description

performance and robustness in switching applications.

Features

  • VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.6µJ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter AOT15S65/AOB15S65 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C C AOTF15S65 650 ±30 15.
  • 10.
  • 60 2.4 86 173 AOTF15S65L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT15S65/AOB15S65 65 0.5 0.6 208.

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Full PDF Text Transcription

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AOT15S65/AOB15S65/AOTF15S65 650V 15A α MOS TM Power Transistor General Description The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced αMOS TM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.29Ω 17.2nC 3.
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