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MRFE6S8046NR1 - RF Power Field Effect Transistors

General Description

56 pF Chip Capacitors 3.9 pf Chip Capacitor 8.2 pF Chip Capacitors 0.01 μF Chip Capacitor 1.5 pF Chip Capacitors 1.2 pF Chip Capacitors 39 pF Chip Capacitors 6.8 pF Chip Capacitor 470 μF 63V Electrolytic Capacitor 4.7 KΩ, 1/4 W Chip Resistor Part Number ATC600F560BT500XT ATC600F3R0BT250XT ATC600F8R2

Key Features

  • Class F Output Matched for Higher Impedances and Greater Efficiency.
  • Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • 225°C Capable Plastic Package.
  • RoHS Compli.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6S8046GNR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

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Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications. • Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.9 20 19.8 hD (%) 58.7 58.5 57.7 MRFE6S8046NR1 MRFE6S8046GNR1 864 - 894 MHz, 35.