MD8IC970GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MD8IC970GNR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	525.07 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MD8IC970GNR1 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev.

2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz.

This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats.

Key Features

Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
On--Chip Prematching. On--Chip Stabilization.
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. RFin2A RFout1A/VD1A VG1A RFin1A VG2A Quiescent Cu.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number	Description
MD8IC970NR1	RF LDMOS Wideband Integrated Power Amplifiers