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Freescale Semiconductor Technical Data
Document Number: MD8IC970N Rev. 2, 5/2011
RF LDMOS Wideband Integrated Power Amplifiers
The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency sub--band. • Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency 850 MHz 900 MHz 940 MHz
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MD8IC970NR1 MD8IC970GNR1
850-940 MHz, 35 W AVG.
MD8IC970NR1 Datasheet
