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MD8IC970GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

General Description

10 μF, 50 V Chip Capacitors 1 μF, 50 V Chip Capacitors 3.3 pF Chip Capacitors 39 pF Chip Capacitors 47 pF Chip Capacitors 4.7 pF Chip Capacitors 0.1 μF, 50 V Chip Capacitors 5.6 pF Chip Capacitors 15 pF Chip Capacitors 4.7 pF Chip Capacitors 2.7 pF Chip Capacitors 5.0 nH 2 Turn Inductors 2.8 nH Chip

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • On--Chip Prematching. On--Chip Stabilization.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. RFin2A RFout1A/VD1A VG1A RFin1A VG2A Quiescent Cu.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MD8IC970NR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency sub--band. • Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg. Frequency 850 MHz 900 MHz 940 MHz www.DataSheet4U.net MD8IC970NR1 MD8IC970GNR1 850-940 MHz, 35 W AVG.