MD8IC970GNR1 Description
Freescale Semiconductor Technical Data Document Number: 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats.
MD8IC970GNR1 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source S--Parameters
- On--Chip Prematching. On--Chip Stabilization
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel