Overview: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers
The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency sub--band. • Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg.
Frequency 850 MHz 900 MHz 940 MHz
..net MD8IC970NR1 MD8IC970GNR1
850-940 MHz, 35 W AVG., 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS Gps (dB) 30.6 31.9 32.6 PAE (%) 40.1 42.4 42.1 IMD (dBc) --30.5 --31.0 --31.
