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MD8IC970NR1 - RF LDMOS Wideband Integrated Power Amplifiers

This page provides the datasheet information for the MD8IC970NR1, a member of the MD8IC970GNR1 RF LDMOS Wideband Integrated Power Amplifiers family.

Description

10 μF, 50 V Chip Capacitors 1 μF, 50 V Chip Capacitors 3.3 pF Chip Capacitors 39 pF Chip Capacitors 47 pF Chip Capacitors 4.7 pF Chip Capacitors 0.1 μF, 50 V Chip Capacitors 5.6 pF Chip Capacitors 15 pF Chip Capacitors 4.7 pF Chip Capacitors 2.7 pF Chip Capacitors 5.0 nH 2 Turn Inductors 2.8 nH Chip

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • On--Chip Prematching. On--Chip Stabilization.
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. RFin2A RFout1A/VD1A VG1A RFin1A VG2A Quiescent Cu.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on--chip prematching that makes it usable from 136 to 940 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical base station modulation formats. This device has a 2--stage design with off--chip matching for the input, interstage and output networks to cover the desired frequency sub--band. • Typical Two--Tone Performance: VDD1 = 28 Volts, VDD2 = 25 Volts, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 Watts Avg. Frequency 850 MHz 900 MHz 940 MHz www.DataSheet4U.net MD8IC970NR1 MD8IC970GNR1 850-940 MHz, 35 W AVG.
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