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MMA20312BT1 Key Features

  • Frequency: 1800--2200 MHz
  • P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
  • Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
  • OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
  • Active Bias Control (adjustable externally)
  • Single 5 V Supply
  • Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel

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MMA20312BT1 Description

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to...