Datasheet Details
| Part number | MMA20312BT1 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 673.04 KB |
| Description | Heterojunction Bipolar Transistor |
| Datasheet | MMA20312BT1_FreescaleSemiconductor.pdf |
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Overview: Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA, PCS, UMTS and LTE. The amplifier is housed in a cost--effective, surface mount QFN plastic package. Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm Frequency Gps (dB) ACPR (dBc) PAE (%) Test Signal 1880 MHz 1920 MHz 2010 MHz 2025 MHz 2140 MHz 29.0 --47.4 9.1 TD--SCDMA 29.0 --46.7 9.0 TD--SCDMA 27.4 --52.0 9.3 TD--SCDMA 26.8 --50.0 9.5 TD--SCDMA 27.0 --51.7 9.
| Part number | MMA20312BT1 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 673.04 KB |
| Description | Heterojunction Bipolar Transistor |
| Datasheet | MMA20312BT1_FreescaleSemiconductor.pdf |
|
|
|
Compare MMA20312BT1 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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|---|---|
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