Datasheet Details
| Part number | MMA20312BVT1 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 826.00 KB |
| Description | Heterojunction Bipolar Transistor |
| Datasheet | MMA20312BVT1-FreescaleSemiconductor.pdf |
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Overview: Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V. The amplifier is housed in a cost--effective, surface mount QFN plastic package. Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm Frequency Gps (dB) ACPR (dBc) PAE (%) Test Signal 1880 MHz 29.0 --47.4 9.1 TD--SCDMA 1920 MHz 29.0 --46.7 9.0 TD--SCDMA 2010 MHz 27.4 --52.0 9.3 TD--SCDMA 2025 MHz 26.8 --50.0 9.5 TD--SCDMA 2140 MHz 27.0 --51.7 9.
| Part number | MMA20312BVT1 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 826.00 KB |
| Description | Heterojunction Bipolar Transistor |
| Datasheet | MMA20312BVT1-FreescaleSemiconductor.pdf |
|
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| Part Number | Description |
|---|---|
| MMA20312BT1 | Heterojunction Bipolar Transistor |
| MMA2201 | Micromachined Accelerometer |
| MMA2201KEG | Low G Micromachined Accelerometer |
| MMA2202KEG | Micromachined Accelerometer |
| MMA2204D | Surface Mount Micromachined Accelerometer |
| MMA2244EG | Low G Micromachined Accelerometer |
| MMA2260 | Axis Micromachined Accelerometer |
| MMA2260D | Axis Micromachined Accelerometer |
| MMA2300 | Surface Mount Micromachined Accelerometer |
| MMA2301 | Surface Mount Micromachined Accelerometer |