MMA20312BVT1 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (In Ga P HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2-- stage high efficiency, Class AB In Ga P HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD--SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V. The amplifier is housed in a cost--effective, surface mount QFN plastic package. - Typical Performance: VCC = 5 Vdc, ICQ = 70 m A, Pout = 17 d Bm Frequency Gps (d B) ACPR (d Bc) PAE (%) Test Signal 1880 MHz 29.0 --47.4 9.1 TD--SCDMA 1920 MHz 29.0 --46.7 9.0 TD--SCDMA 2010 MHz 27.4 --52.0 9.3 TD--SCDMA 2025 MHz 26.8 --50.0 9.5 TD--SCDMA 2140 MHz 27.0 --51.7 9.4 W--CDMA Features - Frequency: 1800--2200 MHz - P1d B: 30.5 d Bm @ 2140 MHz (CW Application Circuit) - Power Gain: 26.4 d B @ 2140 MHz (CW Application Circuit) - OIP3: 44.5 d Bm @ 2140 MHz (W--CDMA Application Circuit) - Active Bias Control (adjustable externally) - Single 3 to 5 V Supply - Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package - In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch...