Part MMA20312BVT1
Description Heterojunction Bipolar Transistor
Category Transistor
Manufacturer Freescale Semiconductor
Size 826.00 KB
Freescale Semiconductor

MMA20312BVT1 Overview

Key Features

  • Frequency: 1800--2200 MHz
  • P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
  • Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
  • OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
  • Active Bias Control (adjustable externally)
  • Single 3 to 5 V Supply
  • Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
  • VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25°C, 50 ohm system, CW Application Circuit Table
  • Rating Symbol Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature VCC ICC Pin Tst