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MMA20312BT1 - Heterojunction Bipolar Transistor

General Description

Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C13 10 pF Chip Capacitors 06035J100GBS AVX C8, C18 1 F Chip Capacitors

Key Features

  • Frequency: 1800--2200 MHz.
  • P1dB: 30.5 dBm @ 2140 MHz (CW.

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Full PDF Text Transcription (Reference)

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Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA, PCS, UMTS and LTE. The amplifier is housed in a cost--effective, surface mount QFN plastic package.  Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm Frequency Gps (dB) ACPR (dBc) PAE (%) Test Signal 1880 MHz 1920 MHz 2010 MHz 2025 MHz 2140 MHz 29.0 --47.4 9.1 TD--SCDMA 29.0 --46.7 9.0 TD--SCDMA 27.4 --52.0 9.