MMA20312BT1
MMA20312BT1 is Heterojunction Bipolar Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Heterojunction Bipolar Transistor Technology (In Ga P HBT)
High Efficiency/Linearity Amplifier
The MMA20312B is a 2--stage high efficiency, Class AB In Ga P HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA, PCS, UMTS and LTE. The amplifier is housed in a cost--effective, surface mount QFN plastic package.
- Typical Performance: VCC = 5 Vdc, ICQ = 70 m A, Pout = 17 d Bm
Frequency
Gps (d B)
ACPR (d Bc)
PAE (%)
Test Signal
1880 MHz 1920 MHz 2010 MHz 2025 MHz 2140 MHz
--47.4
TD--SCDMA
--46.7
TD--SCDMA
--52.0
TD--SCDMA
--50.0
TD--SCDMA
--51.7
W--CDMA
Features
- Frequency: 1800--2200 MHz
- P1d B: 30.5 d Bm @ 2140 MHz (CW Application Circuit)
- Power Gain: 26.4 d B @ 2140 MHz (CW Application Circuit)
- OIP3: 44.5 d Bm @ 2140 MHz (W--CDMA Application Circuit)
- Active Bias Control (adjustable externally)
- Single 5 V Supply
- Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
- In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch...
