MMA20312BVT1 Datasheet - Freescale Semiconductor

Heterojunction Bipolar Transistor

MMA20312BVT1 Features

* Frequency: 1800

* 2200 MHz

* P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)

* Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)

* OIP3: 44.5 dBm @ 2140 MHz (W

* CDMA Application Circuit)

* Active Bias Control (adjustable externally)

* Single 3 to 5 V S

MMA20312BVT1 General Description

Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C9 Components Not Placed C8, C18 1 F Chip Capacitors GRM188R61A105KA61 .

MMA20312BVT1 Datasheet (826.00 KB)

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MMA20312BVT1

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Freescale Semiconductor

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826.00 KB

Description:

Heterojunction bipolar transistor.
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is.

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MMA20312BVT1 Heterojunction Bipolar Transistor Freescale Semiconductor

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MMA20312BVT1 Features

MMA20312BVT1 General Description

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