MMG3015NT1 Datasheet - Freescale Semiconductor

Heterojunction Bipolar Transistor

MMG3015NT1 Features

* Frequency: 0

* 6000 MHz

* P1dB: 20.5 dBm @ 900 MHz

* Small

* Signal Gain: 15.5 dB @ 900 MHz

* Third Order Output Intercept Point: 36 dBm @ 900 MHz

* Single 5 V Supply

* Active Bias Control

* Internally Matched to 50 Ohms

* Cost

* effective SOT

MMG3015NT1 General Description

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 2 123 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22 *A114) Machine Model (per EIA/JESD 22 *A115) Charge Device Model (per JESD 22 *C101) Tabl.

MMG3015NT1 Datasheet (383.50 KB)

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MMG3015NT1

Manufacturer:

Freescale Semiconductor

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383.50 KB

Description:

Heterojunction bipolar transistor.
Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3015NT1 is a.

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MMG3015NT1 Features

MMG3015NT1 General Description

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