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MRF1513NT1 - RF Power Field Effect Transistor N-Channel Enhancement Mode Lateral MOSFET

Features

  • x 0.080″ Microstrip 1.034″ x 0.080″ Microstrip 0.202″ x 0.080″ Microstrip 0.260″ x 0.223″ Microstrip 1.088″ x 0.080″ Microstrip 0.149″ x 0.080″ Microstrip 0.171″ x 0.080″ Micr.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large−signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts D Output Power — 3 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 15.
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