MRF1513NT1 Overview
Freescale Semiconductor Technical Data MRF1513 Rev. 6, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large−signal, mon source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.