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MRF1513T1 - RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET

Key Features

  • S) 4 5 Figure 20. Output Power versus Input Power Figure 21. Input Return Loss versus Output Power.

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( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1513/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. D • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 3 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 15.