Datasheet Summary
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Freescale Semiconductor Technical Data
MRF1513 Rev. 6, 3/2005
RF Power Field Effect Transistor
N- Channel Enhancement- Mode Lateral MOSFET
Designed for broadband mercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large- signal, mon source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment.
- Specified Performance @ 520 MHz, 12.5 Volts D Output Power
- 3 Watts Power Gain
- 11 dB Efficiency
- 55%
- Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive
- Excellent Thermal Stability
- Characterized with Series Equivalent Large- Signal G...