MRF19090SR3, MRF19090R3 Datasheet - Freescale Semiconductor

MRF19090SR3 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. www.datasheet4u.com Typical CDMA Performance: 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 9 Watt.

MRF19090SR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Signa

MRF19090R3_FreescaleSemiconductor.pdf

MRF19090SR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF19090SR3, MRF19090R3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF19090SR3, MRF19090R3

Manufacturer:

Freescale Semiconductor

File Size:

382.82 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF19090SR3, MRF19090R3.
Please refer to the document for exact specifications by model.

MRF19090SR3 Distributor

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MRF19090SR3 MRF19090R3 Power Field Effect Transistors Freescale Semiconductor