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MRF19090SR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF19090SR3 datasheet PDF. This datasheet also includes the MRF19090R3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF19090R3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev.

6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.

Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.

Key Features

  • Internally Matched for Ease of Use.
  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF19090R3 MRF19090SR3 1930- 1990 MHz, 90 W, 26 V.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Motorola Logo MRF19090SR3 RF POWER FIELD EFFECT TRANSISTORS Motorola

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