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MRF21010LSR1 - RF Power Field Effect Transistors

Download the MRF21010LSR1 datasheet PDF (MRF21010LR1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power field effect transistors.

Features

  • High Gain, High Efficiency and High Linearity.
  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21010LR1-FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical W--CDMA Performance: --45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.
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