Datasheet Summary
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Freescale Semiconductor Technical Data
MRF5S21090H Rev. 1, 12/2004
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N
- P C S / c e l l u l a r r a d i o a n d W L L applications.
- Typical 2
- carrier W
- CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain
- 14.5 dB Drain Efficiency
- 26% IM3 @ 10 MHz Offset
- -...