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MRF5S9100NR1 Datasheet Single N-cdma Lateral N-channel Rf Power MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, mon - source amplifier applications in 26 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pout = 20 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.5 dB Drain Efficiency — 28% ACPR @ 750 kHz Offset — - 46.

Key Features

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  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF5S9100NR1 MRF5S9100NBR1 880 MHz, 20 W AVG. , 26 V SINGLE N - CDMA LATER.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S9100NBR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
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MRF5S9101NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9150HR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9150HSR3 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9070NR1 SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
MRF5S9080NBR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S9080NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
MRF5S19060MBR1 RF Power Field Effect Transistors
MRF5S19060MR1 RF Power Field Effect Transistors

MRF5S9100NR1 Distributor