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MRF5S9100NR1 SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

MRF5S9100NR1 Description

Freescale Semiconductor Technical Data Document Number: MRF5S9100N Rev.5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode .
Ferrite Bead, Surface Mount 18 pF Chip Capacitors 0.

MRF5S9100NR1 Features

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* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix I

MRF5S9100NR1 Applications

* with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
* Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 950 mA, Pou

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Datasheet Details

Part number
MRF5S9100NR1
Manufacturer
Freescale Semiconductor
File Size
554.65 KB
Datasheet
MRF5S9100NR1_FreescaleSemiconductor.pdf
Description
SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

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SINGLE N-CDMA LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor
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