MRF6S9160HSR3
MRF6S9160HSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF6S9160HR3 comparator family.
- Part of the MRF6S9160HR3 comparator family.
Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Lower Thermal Resistance Package
- Low Gold Plating Thickness on Leads, 40μ″ Nominal.
- Ro HS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S9160HR3 MRF6S9160HSR3
880 MHz, 35 W AVG., 28 V SINGLE N
- CDMA LATERAL N
- CHANNEL RF POWER MOSFETs
CASE 465
- 06, STYLE 1 NI
- 780 MRF6S9160HR3
CASE 465A
- 06, STYLE 1 NI
- 780S MRF6S9160HSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value
- 0.5, +68
- 0.5, +12 565 3.2
- 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S9160HR3 MRF6S9160HSR3 1
RF Device Data Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 160 W CW Case Temperature 73°C, 35 W CW Symbol RθJC Value (1,2) 0.31 0.33 Unit °C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22
- A114) Machine Model (per EIA/JESD22
- A115) Charge Device Model (per JESD22
- C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate...
