MRF8P20160HSR3 Datasheet RF Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF8P20160HSR3 rf power field effect transistor by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF8P20160HSR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	301.15 KB
Description	RF Power Field Effect Transistor
Download	MRF8P20160HSR3 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MRF8P20160H www.DataSheet4U.com Rev.

0, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In T.

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