MRF8P20160HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF8P20160HSR3, a member of the MRF8P20160HR3 RF Power Field Effect Transistors family.

Product Overview

Motorola Semiconductor Products

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Datasheet Details

Part number	MRF8P20160HSR3
Manufacturer	Motorola Semiconductor Products
File Size	834.56 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8P20160HSR3 Datasheet
Additional preview pages of the MRF8P20160HSR3 datasheet.

MRF8P20160HSR3 Product details

Description

10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 22 μF, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 Ω, 4 W Chip Resistor 8.25 Ω, 1/4 W Chip Res

Features

Production Tested in a Symmetrical Doherty Configuration.
100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.

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Published: Oct 23, 2010 |