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MRF8P20160HSR3 - RF Power Field Effect Transistor

General Description

10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 22 μF, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 Ω, 4 W Chip Resistor 8.25 Ω, 1/4 W Chip Res

Key Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • RoHS Compliant.
  • In T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8P20160H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 hD (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9 ACPR (dBc) -29.8 -30.1 -30.6 MRF8P20160HSR3 1880-2025 MHz, 37 W AVG.