MRF8P20160HSR3 Overview
Freescale Semiconductor Technical Data Document Number: 0, 4/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8P20160HSR3 Key Features
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large-Signal Load-Pull Parameters and mon Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
