MRF8P20160HSR3
MRF8P20160HSR3 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF8P20160H .. Rev. 0, 4/2010
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.5 16.6 16.5 hD (%) 44.8 45.3 45.8 Output PAR (dB) 7.0 6.9 6.9...
