MRF9030LR1 Description
NOT REMENDED FOR NEW DESIGN NOT REMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, mon - source amplifier applications in 26 volt base station...
MRF9030LR1 Key Features
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel
- CHANNEL
- 05, STYLE 1 NI