Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF9030/D
The RF Sub
- Micron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband mercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon
- source amplifier applications in 26 volt base station equipment.
- Typical Two
- Tone Performance at 945 MHz, 26 Volts Output Power
- 30 Watts PEP Power Gain
- 19 dB Efficiency
- 41.5% IMD
- - 32.5 dBc
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 26 Vdc,...
