MRF9030LR1 - RF Power Field Effect Transistors

Motorola Semiconductor (now NXP Semiconductors)

Key Features

st Output Matching Network Z source Z load Figure 9. Series Equivalent Input and Output Impedance.

MRF9030LR1 rf power field effect transistors by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF9030LR1
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	580.43 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF9030LR1 Datasheet

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.