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MRF9030LR1 - RF Power Field Effect Transistor

Key Features

  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9030 Rev. 8, 9/2008 MRF9030LR1 945 MHz, 30 W, 26 V.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9030MBR1 RF Power Field Effect Transistors
MRF9030MBR1 RF POWER FIELD EFFECT TRANSISTORS
MRF9030MR1 RF Power Field Effect Transistors
MRF9030MR1 RF POWER FIELD EFFECT TRANSISTORS
MRF9030NBR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.