Datasheet Summary
NOT REMENDED FOR NEW DESIGN NOT REMENDED FOR NEW DESIGN
Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large
- signal, mon
- source amplifier applications in 26 volt base station equipment.
- Typical Two
- Tone Performance at 945 MHz, 26 Volts Output Power
- 30 Watts PEP Power Gain
- 19 dB Efficiency
- 41.5% IMD
- - 32.5 dBc
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power
Features
- Integrated ESD Protection
-...
