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MRF9030LSR1 - RF Power Field Effect Transistors

Download the MRF9030LSR1 datasheet PDF. This datasheet also covers the MRF9030LR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • st Output Matching Network Z source Z load Figure 9. Series Equivalent Input and Output Impedance.

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Note: The manufacturer provides a single datasheet file (MRF9030LR1_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.