MRF9030SR1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub- Micron MOSFET Line RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon- source amplifier applications in 26 volt base station equipment. - Typical Two- Tone Performance at 945 MHz, 26 Volts Output Power - 30 Watts PEP Power Gain - 19 d B Efficiency - 41.5% IMD - - 32.5 d Bc - Integrated ESD Protection - Designed for Maximum Gain and Insertion Phase Flatness - Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power - Excellent Thermal Stability - Characterized with Series Equivalent Large- Signal Impedance Parameters - In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRF9030R1 MRF9030SR1 945 MHz, 30 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs CASE 360B- 05, STYLE 1 NI- 360 MRF9030R1 CASE 360C- 05, STYLE 1 NI- 360S MRF9030SR1 MAXIMUM RATINGS Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF9030R1 MRF9030SR1 Symbol VDSS VGS PD PD Tstg TJ Value 68 - 0.5, +15 92 0.53 117 0.67 - 65 to +200 200 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9030R1 MRF9030SR1 Symbol RθJC Max 1.9 1.5 Unit °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2002 MRF9030R1 MRF9030SR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characte...