Datasheet4U Logo Datasheet4U.com

MRF9030SR1 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF9030SR1 datasheet PDF. This datasheet also covers the MRF9030R1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • .19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M T A M B M ccc M T A C M B M H F E S (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9030R1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9030LR1 RF Power Field Effect Transistor Freescale Semiconductor
MRF9030MBR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9030MBR1 RF POWER FIELD EFFECT TRANSISTORS Freescale Semiconductor
MRF9030MR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9030MR1 RF POWER FIELD EFFECT TRANSISTORS Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9030LR1 RF Power Field Effect Transistors
MRF9030LSR1 RF Power Field Effect Transistors
MRF9030R1 RF POWER FIELD EFFECT TRANSISTORS
MRF901 NPN Silicon High-Frequency Transistor
MRF9011 NPN Silicon High-Frequency Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9030/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — –32.