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MRF9030MR1 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF9030MR1 datasheet PDF. This datasheet also covers the MRF9030MBR1-1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Short Ferrite Bead, Surface Mount Long Ferrite Bead, Surface Mount 47 pF Chip Capacitors, B Case 0.6-4.5 Variable Capacitor, Gigatrim 3.9 pF Chip Capacitors, B Case 0.8-8.0 Variable Capacitors, Gigatrim 6.8 pF Chip Capacitors, B Case 10 µF, 35 V Tantulum Chip Capacitors 10 pF Chip Capacitors, B Case

Key Features

  • Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs be.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9030MBR1-1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9030LR1 RF Power Field Effect Transistors Motorola
MRF9030LSR1 RF Power Field Effect Transistors Motorola
MRF9030R1 RF POWER FIELD EFFECT TRANSISTORS Motorola
MRF9030SR1 RF POWER FIELD EFFECT TRANSISTORS Motorola
MRF9002R2 RF Power Field Effect Transistor Array Motorola Inc

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9030MR1 RF Power Field Effect Transistors
MRF9030MBR1 RF Power Field Effect Transistors
MRF9030MBR1 RF POWER FIELD EFFECT TRANSISTORS
MRF9030LR1 RF Power Field Effect Transistor
MRF9030NBR1 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.