MRF9030MR1 Datasheet PDF - Freescale Semiconductor RF POWER FIELD EFFECT TRANSISTORS Specs

MRF9030MR1 - RF POWER FIELD EFFECT TRANSISTORS

This page provides the datasheet information for the MRF9030MR1, a member of the MRF9030MBR1-1 RF POWER FIELD EFFECT TRANSISTORS family.

Datasheet Summary

Description

Short Ferrite Bead, Surface Mount Long Ferrite Bead, Surface Mount 47 pF Chip Capacitors, B Case 0.6-4.5 Variable Capacitor, Gigatrim 3.9 pF Chip Capacitors, B Case 0.8-8.0 Variable Capacitors, Gigatrim 6.8 pF Chip Capacitors, B Case 10 µF, 35 V Tantulum Chip Capacitors 10 pF Chip Capacitors, B Case

Features

Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs be.

Datasheet Details

Part number	MRF9030MR1
Manufacturer	Freescale Semiconductor
File Size	620.78 KB
Description	RF POWER FIELD EFFECT TRANSISTORS
Datasheet	MRF9030MR1 Datasheet
Additional preview pages of the MRF9030MR1 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

Published: Feb 8, 2006 |