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MRF9060LR1 - RF Power Field Effect Transistors

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General Description

95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T 5 3052 1648 10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060LR1 MRF9060LSR1 5 4 RF Device Da

Overview

Freescale Semiconductor Technical Data MRF9060 Rev.

8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial.

Key Features

  • 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.80.
  • j0.10 0.80.
  • j0.05 0.81.
  • j0.10 Zload Ω 2.08.
  • j0.65 2.07.
  • j0.38 2.04.
  • j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 MRF9060LSR1 5.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
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