MRF9060LR1 Datasheet
MRF9060LR1 Datasheet (NXP Semiconductors)
NXP Semiconductors
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies u.
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
* RoHS Compliant
* In Tape and Reel. R.
MRF9060LR1 Datasheet (Freescale Semiconductor)
Freescale Semiconductor
95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T−5 3052−1648−10 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC.
LATERAL N
*CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B
*05, STYLE 1 NI
*360 MRF9060LR1
CASE 360C
*05, STYLE 1 NI
*360S MRF9060LSR1
Table 1. Maximum Ratings
Rating Drain
*Source Voltage Gate
*Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Tstg TJ Symbol VDS.