MRF9060LR1 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon- source amplifier applications in 26 volt base station equipment. - Typical Two- Tone Performance at 945 MHz, 26 Volts Output Power - 60 Watts PEP Power Gain - 17 d B Efficiency - 40% IMD - - 31 d Bc .. MRF9060LR1 MRF9060LSR1 - Integrated ESD Protection - Designed for Maximum Gain and Insertion Phase Flatness - Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power - Excellent Thermal Stability - Characterized with Series Equivalent Large- Signal Impedance Parameters - In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. - Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 945 MHz, 60 W, 26 V LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs CASE 360B- 05, STYLE 1 NI- 360 MRF9060LR1 CASE 360C- 05, STYLE 1 NI- 360S MRF9060LSR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Tstg TJ Symbol VDSS VGS PD Value - 0.5, +65 - 0.5, + 15 159 0.91 219 1.25 - 65 to +150 200 Unit Vdc Vdc W W/°C W W/°C °C °C Storage Temperature Range Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case MRF9060LR1 MRF9060LSR1 Symbol RθJC Value 1.1 0.8 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2004. All rights reserved. MRF9060LR1 MRF9060LSR1 5- 1 RF Device Data Freescale...