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MRF9060LR1 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial.

Key Features

  • 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zsource Ω 0.80.
  • j0.10 0.80.
  • j0.05 0.81.
  • j0.10 Zload Ω 2.08.
  • j0.65 2.07.
  • j0.38 2.04.
  • j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 MRF9060LSR1 5.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo MRF9060LR1 RF Power Field Effect Transistors NXP

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