MRF9060NBR1 Datasheet | Freescale Semiconductor

Features - Excellent Thermal Stability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Integrated ESD Protection - 200_C Capable Plastic Package - N Suffix Indicates Lead - Free Terminations. Ro HS pliant. - TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. - TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF9060NR1 MRF9060NBR1 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF9060NR1 CASE 1337 - 03, STYLE 1 TO - 272- 2 PLASTIC MRF9060NBR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, + 15 223 1.79 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.56 Unit °C/W 1. MTTF calculator available at http://.freescale./rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF9060NR1 MRF9060NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model MRF9060NR1 MRF9060NBR1 Class 1 (Minimum) M2 (Minimum) C6 (Minimum) C5 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J -...