MRF9060NBR1 Overview
Freescale Semiconductor Technical Data Document Number: 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 26 volt base station equipment.
MRF9060NBR1 Key Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Integrated ESD Protection
- 200_C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. RoHS pliant
- 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
- 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- CHANNEL BROADBAND RF POWER MOSFETs