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MRF9060NBR1 Datasheet

Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

This datasheet includes multiple variants, all published together in a single manufacturer document.

MRF9060NBR1 Overview

Freescale Semiconductor Technical Data Document Number: 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 26 volt base station equipment.

MRF9060NBR1 Key Features

  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large
  • Signal Impedance Parameters
  • Integrated ESD Protection
  • 200_C Capable Plastic Package
  • N Suffix Indicates Lead
  • Free Terminations. RoHS pliant
  • 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
  • 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
  • CHANNEL BROADBAND RF POWER MOSFETs

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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MRF9060NBR1 Distributor