MRF9060NR1
MRF9060NR1 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
Features
- Excellent Thermal Stability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Integrated ESD Protection
- 200_C Capable Plastic Package
- N Suffix Indicates Lead
- Free Terminations. Ro HS pliant.
- TO
- 270
- 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
- TO
- 272
- 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF9060NR1 MRF9060NBR1
945 MHz, 60 W, 26 V LATERAL N
- CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265
- 08, STYLE 1 TO
- 270- 2 PLASTIC MRF9060NR1
CASE 1337
- 03, STYLE 1 TO
- 272- 2 PLASTIC MRF9060NBR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value
- 0.5, +65
- 0.5, + 15 223 1.79
- 65 to +150 200 Unit Vdc Vdc W W/°C °C °C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (1) 0.56 Unit °C/W
1. MTTF calculator available at http://.freescale./rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9060NR1 MRF9060NBR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model MRF9060NR1 MRF9060NBR1 Class 1 (Minimum) M2 (Minimum) C6 (Minimum) C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22
- A113, IPC/JEDEC J
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