MRF9060NR1 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF9060NR1

MRF9060NR1 - RF Power Field Effect Transistors

Description

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Features

Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Integrated ESD Protection.
200_C Capable Plastic Package.
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF9060NR1 MRF9060NBR1 945 MHz, 60.

Datasheet Details

Part number	MRF9060NR1
Manufacturer	Freescale Semiconductor
File Size	544.41 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF9060NR1 Datasheet
Additional preview pages of the MRF9060NR1 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — - 31.5 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power www.DataSheet4U.

Published: Aug 7, 2008 |