Datasheet4U.com

MRF9060LR1 - RF Power Field Effect Transistors

Product Overview

NXP

📥 Download Datasheet

MRF9060LR1 RF Power Field Effect Transistors by NXP - Datasheet Preview — Datasheet preview – MRF9060LR1

Datasheet Details

Part number	MRF9060LR1
Manufacturer	NXP
File Size	402.19 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF9060LR1 Datasheet
Additional preview pages of the MRF9060LR1 datasheet.

Product details

Features

Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9060 Rev. 9, 5/2006 MRF9060LR1 MRF9060LSR1 945 MHz, 60 W, 26 V.

📁 Similar Datasheet

MRF9060LSR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF9060 - RF Power Field Effect Transistors (Motorola)
MRF9060MBR1 - RF Power Field Effect Transistors (Motorola)
MRF9060MR1 - RF Power Field Effect Transistors (Motorola)
MRF9060NBR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF9060NR1 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF9060R1 - N-CHANNEL BROADBAND RF POWER MOSFETs (Motorola)
MRF9060S - RF Power Field Effect Transistors (Motorola)

Other Datasheets by NXP

MRF9045MBR1 - RF Power FET
MRF9045MR1 - RF Power FET
MRF9120LR3 - RF Power MOSFET
MRF101AN - RF Power LDMOS Transistors
MRF101BN - RF Power LDMOS Transistors
MRF13750H - RF Power LDMOS Transistors

Published: Oct 6, 2024 |