MRF9060LR1 Datasheet | NXP Semiconductors

Features - Integrated ESD Protection - Designed for Maximum Gain and Insertion Phase Flatness - Excellent Thermal Stability - Characterized with Series Equivalent Large - Signal Impedance Parameters - Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9060 Rev. 9, 5/2006 MRF9060LR1 MRF9060LSR1 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 ARCHIVE INFORMATION ARCHIVE INFORMATION CASE 360C - 05, STYLE 1 NI - 360S MRF9060LSR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Symbol VDSS VGS PD Value - 0.5, +65 - 0.5, + 15 159 0.91 219 1.25 Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case MRF9060LR1 MRF9060LSR1 Tstg TC TJ Symbol RθJC - 65 to +150 150 200 Value (1) 1.1 0.8 Table 3. ESD Protection Characteristics Test...