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MRF9060LR1 - RF Power Field Effect Transistors

Key Features

  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9060 Rev. 9, 5/2006 MRF9060LR1 MRF9060LSR1 945 MHz, 60 W, 26 V.

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📁 Similar Datasheet

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MRF9060LR1 RF Power Field Effect Transistors Freescale Semiconductor
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MRF9060MR1 RF Power Field Effect Transistors Motorola

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Full PDF Text Transcription (Reference)

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.