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MRF9060MBR1 - RF Power Field Effect Transistors

Download the MRF9060MBR1 datasheet PDF. This datasheet also covers the MRF9060MR1 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T 5 3052 1648 10 Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet MRF9060MR1 MRF9060MBR1

Key Features

  • H. 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9060MR1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9060LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9060LR1 RF Power Field Effect Transistors NXP
MRF9060LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9060LSR1 RF Power Field Effect Transistors NXP
MRF9060NBR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9060MR1 RF Power Field Effect Transistors
MRF9060 RF Power Field Effect Transistors
MRF9060R1 N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060S RF Power Field Effect Transistors
MRF9060SR1 N-CHANNEL BROADBAND RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — –31.5 dBc www.DataSheet4U.