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MRF9060MBR1 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF9060MBR1, a member of the MRF9060MR1 RF Power Field Effect Transistors family.

Description

Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B110JP 500X 100B100JP 500X 93F2975 100B100JP 500X 100B3R9CP 500X 100B1R7BP 500X 14F185 A04T 5 3052 1648 10 Manufacturer Newark Newark ATC Newark ATC Newark Newark ATC ATC Newark Coilcraft Avnet MRF9060MR1 MRF9060MBR1

Features

  • H. 2.

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Datasheet preview – MRF9060MBR1

Datasheet Details

Part number MRF9060MBR1
Manufacturer Motorola
File Size 457.81 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF9060MBR1 Datasheet
Additional preview pages of the MRF9060MBR1 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — –31.5 dBc www.DataSheet4U.
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