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MRF9060S - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF9060S, a member of the MRF9060 RF Power Field Effect Transistors family.

Description

Ferrite Bead, Fair Rite #2743019447 22 mF, 35 V Tantalum Chip Capacitors, Kemet 0.1 mF, 50 V Chip Capacitors (1210) 27 pF, 50 V Chip Capacitor (0805) 8.2 pF, 50 V Chip Capacitors, ACCU P (0805) 1.0 mF, 35 V Tantalum Chip Capacitors, Kemet 47 pF, 50 V Chip Capacitors, ACCU P (0805) 12

Features

  • Typical Two.
  • Tone Performance at 945 MHz, 26 Volts Output Power.
  • 60 Watts PEP Power Gain.
  • 16 dB Efficiency.
  • 40% IMD.
  • 31 dBc.
  • Integrated ESD Protection.
  • Ease of Design for Gain and Insertion Phase Flatness.
  • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts (CW) Output Power.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large.
  • Signal Impedance Parameters.

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Datasheet preview – MRF9060S

Datasheet Details

Part number MRF9060S
Manufacturer Motorola
File Size 136.20 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF9060S Datasheet
Additional preview pages of the MRF9060S datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.
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