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MRF9060S - RF Power Field Effect Transistors

Download the MRF9060S datasheet PDF. This datasheet also covers the MRF9060 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Ferrite Bead, Fair Rite #2743019447 22 mF, 35 V Tantalum Chip Capacitors, Kemet 0.1 mF, 50 V Chip Capacitors (1210) 27 pF, 50 V Chip Capacitor (0805) 8.2 pF, 50 V Chip Capacitors, ACCU P (0805) 1.0 mF, 35 V Tantalum Chip Capacitors, Kemet 47 pF, 50 V Chip Capacitors, ACCU P (0805) 12

Key Features

  • Typical Two.
  • Tone Performance at 945 MHz, 26 Volts Output Power.
  • 60 Watts PEP Power Gain.
  • 16 dB Efficiency.
  • 40% IMD.
  • 31 dBc.
  • Integrated ESD Protection.
  • Ease of Design for Gain and Insertion Phase Flatness.
  • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts (CW) Output Power.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large.
  • Signal Impedance Parameters.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9060-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF9060LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9060LR1 RF Power Field Effect Transistors NXP
MRF9060LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF9060LSR1 RF Power Field Effect Transistors NXP
MRF9060NBR1 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF9060SR1 N-CHANNEL BROADBAND RF POWER MOSFETs
MRF9060 RF Power Field Effect Transistors
MRF9060MBR1 RF Power Field Effect Transistors
MRF9060MR1 RF Power Field Effect Transistors
MRF9060R1 N-CHANNEL BROADBAND RF POWER MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment.