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Freescale Semiconductor Technical Data
MRF9060 Rev. 8, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc
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MRF9060LSR1 Datasheet
