Datasheet4U Logo Datasheet4U.com

MRFG35003MT1 - RF Power Field Effect Transistors

Description

3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 µF Chip Capacitors 39K pF Chip Capacitors 22 µF Tantalum Capacitors 1.0 pF Chip Capacitor 15.0 pF Chip Capacitor 4.7 nH Chip Inductor 8.2 nH Chip Inductor 75 W,

Features

  • that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other p.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRFG35003MT1 RF Power Field Effect Transistor Motorola
MRFG35003M6T1 RF Power Field Effect Transistor Motorola
MRFG35010MT1 RF Power Field Effect Transistor Motorola
MRF Fast Acting Radial Lead Micro Fuse Series Bel Fuse
MRF-261 High Band VHF FM Power Transistor Eleflow

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFG35003N6T1 RF Power Field Effect Transistor
MRFG35003NT1 RF Power Field Effect Transistors
MRFG35002N6AT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35002N6T1 Gallium Arsenide PHEMT RF Power Field Effect Transistor
MRFG35005MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT RF Power Field Effect Transistors Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 300 mWatt Power Gain — 11.5 dB Efficiency — 25% • 3 Watts P1dB @ 3.
Published: |